Design of Wideband Continuous-Time ΔΣ ADCs Using Two-Step Quantizers

Continuous-time delta sigma (CT-ΔΣ) ADCs are established as the data conversion architecture of choice for the next-generation wireless applications. Several efforts have been made to simultaneously improve the bandwidth and dynamic range of ΔΣ ADCs. We proposed using two-step quantizer in a single-loop CT-ΔΣ modulator to achieve higher conversion bandwidth. This paper presents a tutorial for employing the design technique through a 130n CMOS implementation. The proposed 640 MS/s, 4th order continuous-time delta sigma modulator (CT-ΔΣM) incorporates a two-step 5-bit quantizer, consisting of only 13 comparators. The CT-ΔΣM achieves a dynamic range of 70 dB, peak SNDR of 65.3 dB with 32 MHz bandwidth (OSR = 10) while consuming only 30 mW from the 1.2 V supply. The relevant design trade offs have been discussed and presented with simulation results

A 1 GS/s, 31 MHz BW, 76.3 dB Dynamic Range, 34 mW CT-ΔΣ ADC with 1.5 Cycle Quantizer Delay and Improved STF

A 1 GS/s Continuous-time Delta-Sigma modulator (CT-ΔΣM) with 31 MHz bandwidth, 76.3 dB dynamic range and 72.5 dB signal-to-noise is reported in a 0.13μm CMOS technology. The design employs an excess loop delay (ELD) of more than one clock cycle for achieving higher sampling rate. The ELD is compensated using a fast-loop formed around the last integrator by using a sample-and-hold. Further, the effect of this ELD compensation scheme on the signal transfer function (STF) of a feedforward CT-ΔΣ architecture has been analyzed and reported. In this work, an improved STF is achieved by using a combination of feed-forward, feed-back and feed-in paths and power consumption is reduced by eliminating the adder opamp. This CT-ΔΣM has a conversion bandwidth of 31 MHz and consumes 34 mW from the 1.2V power supply. The relevant design trade-offs have been investigated and presented along with simulation results

A Low-Power Single-Bit Continuous-Time ΔΣ Converter with 92.5 dB Dynamic Range for Biomedical Applications

A third-order single-bit CT-ΔΣ modulator for generic biomedical applications is implemented in a 0.15 µm FDSOI CMOS process. The overall power efficiency is attained by employing a single-bit ΔΣ and a subthreshold FDSOI process. The loop-filter coefficients are determined using a systematic design centering approach by accounting for the integrator non-idealities. The single-bit CT-ΔΣ modulator consumes 110 µW power from a 1.5 V power supply when clocked at 6.144 MHz. The simulation results for the modulator exhibit a dynamic range of 94.4 dB and peak SNDR of 92.4 dB for 6 kHz signal bandwidth. The figure of merit (FoM) for the third-order, single-bit CT-ΔΣ modulator is 0.271 pJ/level

High-Speed Delta-Sigma Data Converters for Next-Generation Wireless Communication

In recent years, Continuous-time Delta-Sigma(CT-ΔΣ) analog-to-digital converters (ADCs) have been extensively investigated for their use in wireless receivers to achieve conversion bandwidths greater than 15 MHz and higher resolution of 10 to 14 bits. This dissertation investigates the current state-of-the-art high-speed single-bit and multi-bit Continuous-time Delta-Sigma modulator (CT-ΔΣM) designs and their limitations due to circuit non-idealities in achieving the performance required for next-generation wireless standards. Also, we presented complete architectural and circuit details of a high-speed single-bit and multi-bit CT-ΔΣM operating at a sampling rate of 1.25 GSps and 640 MSps respectively (the highest reported sampling rate in a 0.13 μm CMOS technology node) with measurement results. Further, we propose novel hybrid ΔΣ architecture with two-step quantizer to alleviate the bandwidth and resolution bottlenecks associated with the contemporary CT-ΔΣM topologies. To facilitate the design with the proposed architecture, a robust systematic design method is introduced to determine the loop-filter coefficients by taking into account the non-ideal integrator response, such as the finite opamp gain and the presence of multiple parasitic poles and zeros. Further, comprehensive system-level simulation is presented to analyze the effect of two-step quantizer non-idealities such as the offset and gain error in the sub-ADCs, and the current mismatch between the MSB and LSB elements in the feedback DAC. The proposed novel architecture is demonstrated by designing a high-speed wideband 4th order CT-ΔΣ modulator prototype, employing a two-step quantizer with 5-bits resolution. The proposed modulator takes advantage of the combination of a high-resolution two-step quantization technique and an excess-loop delay (ELD) compensation of more than one clock cycle to achieve lower-power consumption (28 mW), higher dynamic range (\u3e69 dB) with a wide conversion bandwidth (20 MHz), even at a lower sampling rate of 400 MHz. The proposed modulator achieves a Figure of Merit (FoM) of 340 fJ/level

A CMOS Spiking Neuron for Brain-Inspired Neural Networks with Resistive Synapses and In-Situ Learning

Nanoscale resistive memories are expected to fuel dense integration of electronic synapses for large-scale neuromorphic system. To realize such a brain-inspired computing chip, a compact CMOS spiking neuron that performs in-situ learning and computing while driving a large number of resistive synapses is desired. This work presents a novel leaky integrate-and-fire neuron design which implements the dual-mode operation of current integration and synaptic drive, with a single opamp and enables in-situ learning with crossbar resistive synapses. The proposed design was implemented in a 0.18 $\mu$m CMOS technology. Measurements show neuron's ability to drive a thousand resistive synapses, and demonstrate an in-situ associative learning. The neuron circuit occupies a small area of 0.01 mm$^2$ and has an energy-efficiency of 9.3 pJ$/$spike$/$synapse

A 1 GS/s, 31 MHz BW, 76.3 dB Dynamic Range, 34 mW CT-ΔΣ ADC with 1.5 Cycle Quantizer Delay and Improved STF

A 1 GS/s continuous-time delta-sigma modulator (CT- ΔΣM) with 31 MHz bandwidth, 76.3 dB dynamic range and 72.5 dB peak-SNDR is reported in a 0.13 μm CMOS technology. The design employs an excess loop delay (ELD) of more than one clock cycle for achieving higher sampling rate. The ELD is compensated using a fast-loop formed around the last integrator by using a sample-and-hold. Further, the effect of this ELD compensation scheme on the signal transfer function (STF) of a feedforward CT- ΔΣ architecture has been analyzed and reported. In this work, an improved STF is achieved by using a combination of feed-forward, feed-back and feed-in paths and power consumption is reduced by eliminating the adder opamp. This CT- ΔΣ M has a conversion bandwidth of 31 MHz and consumes 34 mW from the 1.2 V power supply. The relevant design trade-offs have been investigated and presented along with simulation results

Systematic Design of 10-Bit 50MS/s Pipelined ADC

A systematical design analysis of a 10-bit 50MS/s pipelined ADC is presented. With an opamp-sharing technique, the power consumption is reduced drastically. Simulated in a 130-nm CMOS process, it achieves a 58.9dB signal-to-noise ratio (SNR), a 9.3 effective number of bits (ENOB), 64dB spurious free dynamic range (SFDR) with a sinusoid input of 4.858-MHz 1-Vpp at 50MS/s, and consumes less than 24 mW from a 1.2-V supply

A CMOS Spiking Neuron for Brain-Inspired Neural Networks with Resistive Synapses and \u3cem\u3eIn-Situ\u3c/em\u3e Learning

Nano-scale resistive memories are expected to fuel dense integration of electronic synapses for large-scale neuromorphic system. To realize such a brain-inspired computing chip, a compact CMOS spiking neuron that performs in-situ learning and computing while driving a large number of resistive synapses is desired. This work presents a novel leaky integrate-and-fire neuron design which implements the dual-mode operation of current integration and synaptic drive, with a single opamp and enables in-situ learning with crossbar resistive synapses. The proposed design was implemented in a 0.18μm CMOS technology. Measurements show neuron’s ability to drive a thousand resistive synapses, and demonstrate an in-situ associative learning. The neuron circuit occupies a small area of 0.01mm2 and has an energy-efficiency of 9.3pJ/spike/synapse

Efficient Design and Synthesis of Decimation Filters for Wideband Delta-Sigma ADCs

A design methodology for synthesizing power-optimized decimation filters for wideband Delta Sigma (ΔΣ) analog-to-digital converters (ADCs) for next-generation wireless standards is presented. The decimation filter is designed to filter the out-of-band quantization noise from a fifth-order continuous-time ΔΣ modulator, with 20 MHz signal bandwidth and 14-bits resolution. The modulator employs an oversampling ratio (OSR) of 16 with a clock rate of 640 MHz. Retiming, pipelining, Canonical Signed Digits (CSD) encoding has been utilized along with an optimized halfband filter to realize the power savings in the overall decimation filter. A process flow to rapidly design the optimized filters in MATLAB, generate the hardware description language (HDL) code and then automatically synthesize the design using standard cells has been presented. The decimation filter is implemented using standard cells in a 45 nm CMOS technology occupies a layout area of 0.12 mm2 and consumes 8 mW power from the 1.1 V supply

Design Analysis of a 12.5 GHz PLL in 130 nm SiGe BiCMOS Process

A systematic design method is applied to study and analyze the loop stability and phase noise of a type-II 3rd-order charge pump PLL. The designed PLL outputs at 12.5 GHz, which is intended to provide a clock for a silicon photonic transmitter prototype. The charge pump current and loop filter resistor are made tunable to cover process and temperature variations. The PLL is designed in a 130 nm SiGe BiCMOS process. The rms jitter of the studied PLL output is about 5 ps with a 97.7 MHz reference clock with 4.9 ps rms jitter from a 0.05 to 12.5 GHz signal generator. The total power consumption of the PLL is less than 175 mW from a 2.5 V power supply